Samsung just announced that the mass production of the industry’s first 1TB eUFS chips. This also hints on what is to be expected for the upcoming Samsung flagship smartphones that are coming soon.

The all new 1TB eUFS 2.1 chips are made for mobile devices such as smartphones. It has only been 4 years since the introduction of the 128GB eUFS chip and Samsung has now crossed the terabyte threshold for a smartphone’s internal storage. We have seen the Galaxy Note9 crossing the terabyte threshold by having a 512GB internal storage coupled with a 512GB microSD card.

Samsung 1TB eUFS 2.1 chip

The 1TB eUFS is expected to play a critical role in bringing a more notebook-like user experience to the next generation of mobile devices. What’s more, Samsung is committed to assuring the most reliable supply chain and adequate production quantities to support the timely launches of upcoming flagship smartphones in accelerating growth of the global mobile market.

– Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics

According to Samsung, the 1TB eUFS chip still has the same size as before, but stacked by 16 layers of Samsung’s advanced 512Gb (that’s gigabit) V-NAND flash memory and coupled with a newly developed proprietary controller.

Samsung 1TB eUFS 2.1 chip

Since it is using a brand new controller, Samsung also claims that it can achieve even higher speeds than before – up to 1,000MB/s of read speed, the transfer speed can actually be bottlenecked by a 2.5-inch SATA III-based SSD. That means you will definitely need an NVMe SSD to make use of all that speed that the Samsung 1TB eUFS chip.

Memory Sequential Read Speed Sequential Write Speed Random Read Speed Random Write Speed
Samsung 1TB eUFS 2.1 (Jan. 2019) 1000MB/s 260MB/s 58,000 IOPS 50,000 IOPS
Samsung 512GB eUFS 2.1 Nov. 2017) 860MB/s 255MB/s 42,000 IOPS 40,000 IOPS
Samsung eUFS 2.1 for automotive (Sept. 2017) 850MB/s 150MB/s 45,000 IOPS 32,000 IOPS
Samsung 256GB UFS Card (July 2016) 530MB/s 170MB/s 40,000 IOPS 35,000 IOPS
Samsung 256GB eUFS 2.0 (Feb. 2016) 850MB/s 260MB/s 45,000 IOPS 40,000 IOPS
Samsung 128GB eUFS 2.0 (Jan. 2015) 350MB/s 150MB/s 19,000 IOPS 14,000 IOPS
eMMC 5.1 250MB/s 125MB/s 11,000 IOPS 13,000 IOPS
eMMC 5.0 250MB/s 90MB/s 7,000 IOPS 13,000 IOPS
eMMC 4.5 140MB/s 50MB/s 7,000 IOPS 2,000 IOPS

Not only that the sequential read/write speeds are increased, but the random IOPS too. Samsung claims that the new chip can achieve up to 58,000 IOPS which is definitely great for those who have thousands of images in the gallery, trying to load all the thumbnails. To learn more about sequential read/write and random IOPS, watch the video below.

Samsung plans to expand the production of its fifth-generation 512Gb V-NAND at its Pyeongtaek plant in Korea throughout the first half of 2019 to fully address the anticipated strong demand for the 1TB eUFS from mobile device manufacturers around the world.


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